Influence of the Top Chamber Window Temperature on the STI Etch Process

摘要：

During shallow trench isolation etching it was found that etch stop appears at the center of a 300 mm wafer as the temperature of the top quartz window of the etch chamber exceeds 85℃. We have attributed the etch stop to the re-deposition of some low-volatile SiOxCly etch products. At low quartz window temperatures, part of the products are deposited on it, but as the window temperature rises well above the wafer temperature (which is constant at 60℃), these products are deposited on the wafer causing the etch stop.

作者: D. Shamiryan E. Danilkin S. Tinck M. Klick A. Milenin M. R. Baklanov T. W. Boullart

作者单位: Dry Etch Group, IMEC, Leuven, 3001, Belgium Mikron, Moscow, Zelenograd, 124460, Russia PLASMANT group, Department of Chemistry, University of Antwerp, Antwerpen-Wilrijk, 2610, Belgium Plasmetrex GmBH, Berlin, 12489, Germany

会议类型: 国际会议

会议名称: China Semiconductor Technology International Conference 2010(中国国际半导体技术大会 CSTIC)

会议地点: 上海

会议语种:英文

页码: 731-736

在线出版日期: 2010-03-18（万方平台首次上网日期，不代表论文的发表时间）