Impact of Etching Chemistry and Sidewall Profile on Contact CD and Open performance in Advanced Logic Contact Etch
As the advanced logic semiconductor technology moves to 65nm node and beyond, contact etch process technology has encountered significant challenges, such as inadequate top-view contact open of high aspect ratio, insufficient amount of photo-resist (PR), and the undesirable trade-off between polymer-rich etch process for enabling the critical dimension (CD) shrinkage and polymer-lean etch process to enlarge the process window. In this paper, we focus on resolving these challenges. Results obtained demonstrate that (a) CHF3 delivers the best top-view of contact hole, (b) lower ratio of source power to bias power gives more vertical profile of contact hole, and (c) O2 ratio, with respect to other etchants, is also an effective knob to control contact open window.
Xin-Peng Wang Hai-Yang Zhang Shih-Mou Chang Kwok-Fung Lee Wu Sun Yi Huang
Semiconductor Manufacturing International Corporation, No.18 Zhang Jiang Rd., Pudong New Area, Shang Semiconductor Manufacturing International Corporation, No.18 Wen Chang Rd., BDA, Beijing, 100176, P.
国际会议
China Semiconductor Technology International Conference 2010(中国国际半导体技术大会 CSTIC)
上海
英文
737-741
2010-03-18（万方平台首次上网日期，不代表论文的发表时间）