The Mechanisms of Over-etch in Poly-gate Etching
The over-etch mechanism in poly-gate etching is investigated. The relationships between the final poly-gate profile and the over-etch process parameters are presented. The final profile of poly-gate is more or less affected by nearly every parameter in the over-etch process steps. In this study, the notch and footing issue of poly-gate profile has also been investigated to find that the profile very sensitive to the oxygen flow and the temperature of electrostatic chuck (ESC). Two corresponding process models are suggested.
Zhang Qingzhao Xing Tao Yang Weifeng Wang Baoquan Li Bing Xia yang
NMC Co., Ltd, Beijing Institute of Microelectronics, Chinese Academy of Sciences (IMECAS), Beijing NMC Co., Ltd, Beijing Institute of Microelectronics, Chinese Academy of Sciences (IMECAS), Beijing
国际会议
China Semiconductor Technology International Conference 2010(中国国际半导体技术大会 CSTIC)
上海
英文
743-748
2010-03-18（万方平台首次上网日期，不代表论文的发表时间）