Modulation and Extraction of Schottky Barrier Height for Advanced Source/Drain Contact
As the device geometry dramatically shrinks, the silicide/Si contact resistance on source/drain regions is one of the dominating the parasitic resistances degrading the device performance. To lower the contact resistance, one of the effective methods is to lower the Schottky barrier height (SBH) of silicide/Si contact on source/drain regions. In this paper the influence of alloy addition on Ni silicidation and the corresponding SBH, such as Ni(Y), Ni(Yb) and Ni(Al) is investigated. In addition, as one of the rare earth (RE) silicides, YbSi2-x is a promising contact material in conventional n-channel metal-oxide-semiconductor field effect transistors (nMOSFET) and n-channel Schottky barrier source/drain FETs. In this study, the suppression of oxidation and pinhole-free YbSi2-x film preparation is reported. To extract the low SBH, a new method based on admittance measurement will also be introduced.
Yu-Long Jiang Bing-Zong Li
ASIC and System State Key Laboratory, School of Microelectronics, Fudan University, Shanghai, 200433, China
国际会议
China Semiconductor Technology International Conference 2010(中国国际半导体技术大会 CSTIC)
上海
英文
759-765
2010-03-18（万方平台首次上网日期，不代表论文的发表时间）