Use of Neural Network to Model the Refractive Property of PECVD Silicon Nitride Films Used to Prevent Water Permeability of Piezoresistive Pressure Sensor

摘要：

The application of plasma-enhanced chemical vapor deposition (PECVD) silicon nitride, commonly used as the passivation layer for ICs, has been applied to advanced sensors as well. For example, the silicon nitride film coating the piezoresistive pressure sensor of a blood pressure sensor is used to prevent water permeation when immerged into liquid. In this paper, we applied a combination of design-of-experiment (DOE) and neural network to reveal the relationship between input parameters and refractive indexes of PECVD silicon nitride films. We also introduced a metrology to quantify the water permeability into the film based on the corresponding resistance test structure measurement and the break down measurement. These two performance tests are further used to optimize the silicon nitride deposition.

作者: Thongchai Thongvigitmanee Arckom Srihapat Charoenchai Khompatraporn Adsada Jiraprayuklert Wisut Titiroongruang

作者单位: Department of Electrical Engineering, King Mongkuts Institute of Technology Ladkrabang, Bangkok 105 Thai Microelectronics Center, National Electronics and Computer Technology Center, 51/4 Moo 1, Wangt Department of Production Engineering, King Mongkuts University of Technology Thonburi, Bangmod, Ban Department of Electrical Engineering, King Mongkuts Institute of Technology Ladkrabang, Bangkok 105

会议类型: 国际会议

会议名称: China Semiconductor Technology International Conference 2010(中国国际半导体技术大会 CSTIC)

会议地点: 上海

会议语种:英文

页码: 767-772

在线出版日期: 2010-03-18（万方平台首次上网日期，不代表论文的发表时间）