Study of Crater Defect Reduction in Cu Plating Process
In copper metallization of back-end-of-line (BEOL) processes, the electro chemical plating (ECP) is commonly used for filling copper in via and trenches after the corresponding barrier & seed process. Crater defect, revealed only after the subsequent chemicalmechanical polishing (CMP) step, has been recently identified as one of the most dominant yield killer defects of ECP process. In this paper, weve investigated the root causes for crater defect formation to find that VOC are key suspects. A new five-layer VOC filtering system has been implemented resulting in satisfactory results.
Liang Chen Kan Wu Peng He Yi Jun Bian Jiwei Zhang Paul Chang Lin Wen Pin Chiu Cheng Xing
SMIC (Semiconductor Manufacturing International Corporation) 18, Zhangjiang Rd, Pudong, Shanghai 201203,PRC
国际会议
China Semiconductor Technology International Conference 2010(中国国际半导体技术大会 CSTIC)
上海
英文
773-777
2010-03-18（万方平台首次上网日期，不代表论文的发表时间）