First Multi Beam Full Cut Laser Dicing of Thin Low-K Wafers
(0) The traditional blade dicing technology has gone through an impressive evolution keeping up with quality, cost and miniaturization requirements that the semiconductor technology roadmaps introduced and specified. However, since wafer technologies have dropped below 90nm node and low k materials were introduced it became clear that blade dicing evolution came to an end and expensive hybrid solutions such as combined laser grooving processes and blade dicing technologies were required to achieve the desired product reliability. Similar situations have been seen with the ongoing trend to thinner wafer that are needed for miniaturization, 3D packaging and IC performance improvements. To achieve sufficient mechanical strength, complex dicing technologies and sequences have been introduced which do not respond to the requirements for current and near future technologies. The paper will discuss how a multi beam process will play a dominant role to achieve a narrow dicing kerf, an extreme small Heat Affected Zone, high die strength values (typical 800-1000 MPa), all while maintaining a high productivity (>12 wafers per hour).
Jeroen van Borkulo Rene Hendriks
ALSI, platinawerf 20G, 6641TL Beuningen Netherlands
国际会议
China Semiconductor Technology International Conference 2010(中国国际半导体技术大会 CSTIC)
上海
英文
891-896
2010-03-18（万方平台首次上网日期，不代表论文的发表时间）