Selective Epitaxial Growth of InP in STI Trenches on Off-axis Si (001) Substrates
We report high quality InP layers selectively grown in shallow trench isolation structures on 6° offcut Si (001) substrates capped with a thin Ge buffer layer. The Ge layer was used to reduce the thermal budget for surface clean and double step formation. The atomic steps on the Ge surface were recovered after a bake at 680 ℃. Smooth nucleation layer was obtained at 420 ℃ on the Ge surface. Baking the Ge surface in As ambient facilitates the InP nucleation and improves the InP crystalline quality. This improvement is attributed to the effective As adsorption on the Ge surface and the polar Ge:As surface prevents the islanding of InP seed layer. Stacking faults were found in the InP layers as a result of threading dislocation dissociation and high quality InP layers were obtained in trenches with aspect ratios greater than 2.
G. Wang M.M. Heyns M. Caymax N. D. Nguyen M.R. Leys R. Loo G. Brammertz O. Richard H. Bender J. Dekoster M. Meuris
IMEC, Kapeldreef 75, B-3001, Leuven, Belgium Departement of MTM, KULeuven, B-3001, Leuven, Belgium IMEC, Kapeldreef 75, B-3001, Leuven, Belgium
国际会议
China Semiconductor Technology International Conference 2010(中国国际半导体技术大会 CSTIC)
上海
英文
959-964
2010-03-18（万方平台首次上网日期，不代表论文的发表时间）