Diamond Islands Wafer for Super LED Manufacture
Diamonds (111) face can grow epitaxial GaN with wurtzite structure. Better still, single crystal AlN can be deposited directly on such diamond surface. Boron doped diamond has the highest mobility of holes, and silicon doped AlN can boost electron mobility. The AlN on diamond is capable to emit ultraviolet (UV) light with high intensity. Such UV light can excite phosphors for the emission of different colors, including white light with balanced RGB distribution. There are many possibilities of making super LED with diamond. Unfortunately, diamond wafers are not available commercially. However, synthetic diamond crystals can be made cheaply by a noval seeding technology (DiaCan.). These diamond crystals are embedded in a ceramic matrix to form diamond islands wafer (DIW). DIW is the enabling substrate for making super LED in the near future.
James C. Sung Ming-Chi Kan Shao-Chung Hu Joe C. C. Yuan Michael Sung
KINIK Company, Taipei, Taiwan National Taiwan University, Taipei, Taiwan National Taipei University KINIK Company, Taipei, Taiwan Taidiam Technology, Zhengzhou, Henan, China Advanced Diamond Solutions, San Francisco, U.S.A. SinoDiamond, Haian, Jiangsu, China
国际会议
China Semiconductor Technology International Conference 2010(中国国际半导体技术大会 CSTIC)
上海
英文
971-976
2010-03-18（万方平台首次上网日期，不代表论文的发表时间）