Oxygen Precipitate Nucleation in Heavily Antimony-doped Czochralski Silicon
Oxygen precipitate nucleation behaviors have been comparatively investigated in the heavily antimony (Sb)-doped and lightly phosphorus (P)-doped Czochralski silicon (CZ-Si) wafers subjected to the high temperature anneal at 1000 ℃ for 16 h following the nucleation anneal at 450, 650 or 750 ℃ for up to 64 h. It is found that in the heavily Sb-doped CZ-Si the oxygen precipitate nucleation at 450 or 750 ℃ is always suppressed, while that at 650 ℃ is hardly suppressed in the case of sufficient length of annealing. It is believed that oxygen precipitate nucleation based on the Sb-V complexes occurs at 650 ℃, whereas, this is not the case at 450 or 750 ℃. Therefore, oxygen precipitate nucleation at 650 ℃ is enhanced in the heavily Sb-doped CZ-Si. Moreover, it can be comparable to that in the lightly P-doped CZ-Si as the annealing time is long enough.
Weijiang Zhu Xiangyang Ma Jiahe Chen Yuheng Zeng Deren Yang
State Key Laboratory of Silicon Materials and Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, Peoples Republic of China
国际会议
China Semiconductor Technology International Conference 2010(中国国际半导体技术大会 CSTIC)
上海
英文
1027-1033
2010-03-18（万方平台首次上网日期，不代表论文的发表时间）