Germanium Doping of Si Substrates for Improved Device Characteristics and Yield
During the last decade the 300 mm Si wafer has been optimized and one is already studying 450 mm crystals and wafers. The increasing silicon crystal diameter shows two important trends with respect to substrate characteristics: the interstitial oxygen concentration is decreasing while the size of grown in voids (COPs) in vacancy-rich crystals is increasing. The first effect is due the suppression of melt movements by the use of magnetic fields leading to a more limited transport of oxygen to the crystal. This and the decreasing thermal budget of advanced device processing leads to reduced internal gettering capacity. The increasing COP size is due to the combination of decreasing pulling rate and thermal gradient leading to a decreased void nucleation and increased thermal budget for void growth. The effect of Ge doping in the range between 1016 cm-3 and 1019 cm-3 on both COPs and oxygen precipitation will be discussed.
J. Vanhellemont J. Chen W. Xu D. Yang J.M. Rafi H. Ohyama E. Simoen
Department of Solid State Sciences, Ghent University, B-9000 Ghent, Belgium State Key Lab of Silicon Materials, Zhejiang University, 310027 Hangzhou, P.R. China Institut für An State Key Lab of Silicon Materials, Zhejiang University, 310027 Hangzhou, P.R. China CNM-CSIC, Campus U.A.B, 08193, Bellaterra, Barcelona, Spain Kumamoto National College of Technology, Kumamoto, 861-1102 Japan IMEC, B-3001 Leuven, Belgium
国际会议
China Semiconductor Technology International Conference 2010(中国国际半导体技术大会 CSTIC)
上海
英文
1041-1046
2010-03-18（万方平台首次上网日期，不代表论文的发表时间）