THE APPLICATION OF REACTIVE ION ETCHING (RIE) IN TEXTURING OF MULTICRYSTALLINE SILICON WAFERS FOR SOLAR CELLS
Anti-reflection effect of three different surfaces including blank, wet acidic etched and RIE etched are compared on the basis of reflectance measurements. RIE has been to be found as the most effective method to reduce reflection of multicrystalline silicon surface, and as a result, can afford high efficiency of solar cells. We also optimized the RIE parameters. For SF6/O2 flow ratio of 2:1, crowded and dense crater-like structures on silicon surface were observed. Reflectance measurement results show that such a figure exhibits good anti-reflectance behavior. The lowest reflectance we got has been reached about 15.7％. Further increase SF6/O2 flow ratio, the reflectance increased instead of decreased. That means SF6/O2 flow ratio of 2:1 is the most appropriate flow ratio. Another important parameter is etching time. We maintained plasma conditions as earlier and keep SF6/O2 flow ratio of 2:1, then varied the etching time. At etching time of 15min, we got a perfect reflecting result on the surface of multicrystalline silicon.
Hu Liqiong Zhao Lei Tan Zongliang
Beijing North Microelectronics Co., Ltd 1 East Jiuxianqiao Rd., Beijing, China
国际会议
China Semiconductor Technology International Conference 2010(中国国际半导体技术大会 CSTIC)
上海
英文
1093-1098
2010-03-18（万方平台首次上网日期，不代表论文的发表时间）