Performance of Silicon Ballistic Nanowire MOSFET with Diverse Orientations and Diameters
To investigate the performance of the silicon b allistic nanowire MOSFET with diverse orientations and diam eters, the subband structure of silicon nanowire has been calculated by using the tight binding sim ulator, a nd observed the changing of a minimum e nergy in the conduction and the valence subband and effective mass of electron and hole. This paper also present a compact model, which is used in num erical evaluation of the current vs. voltage cha racteristics of ballistic devices. Fina lly, the drain saturation current of n- and p-channel device with different orientations and diameters is shown.
A. Abudukelimu K. Kakushima P. Ahmet K. Tsutsui A. Nishiyama N. Sugii K. Natori T. Hattori H. Iwai
Frontier Research Center,Tokyo Institute of Technology, Yokohama 226-8503, Japan Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, Yokoham
国际会议
China Semiconductor Technology International Conference 2010(中国国际半导体技术大会 CSTIC)
上海
英文
1111-1116
2010-03-18（万方平台首次上网日期，不代表论文的发表时间）