Copper precipitates in multicrystalline silicon for solar cells

摘要：

In this paper, we have investigated the behaviors of Cu precipitation in multi-crystalline silicon by intentionally contaminating. It is found that, the Cu impurities are easily gettered at the structural defects, i.e. grain-boundaries and dislocations. However, in the defect-free region, the Cu impurities tend to form different kinds of precipitates, strongly dependent on the contamination level. The dot-like precipitates are often formed in the samples with low temperature contamination, and the starlike ones in the samples with high temperature contamination. The microwave photoconductivity decay measurements indicate that the Cu precipitates have strong recombination activity, significantly reducing the minority carrier lifetime.

作者: Xiaoqiang Li Deren Yang Xuegong Yu Duanlin Que

作者单位: State Key Laboratory of Silicon Materials and Department of Materials Science and Engineering．Zhejiang University，Hangzhou 310027, China

会议类型: 国际会议

会议名称: China Semiconductor Technology International Conference 2010(中国国际半导体技术大会 CSTIC)

会议地点: 上海

会议语种:英文

页码: 1135-1140

在线出版日期: 2010-03-18（万方平台首次上网日期，不代表论文的发表时间）