Laser Annealing and Local Heating Effects during Raman Measurement of Hydrogenated Amorphous Silicon Films
Two possible side effects when evaluating the crystalline volume fraction of microcrystalline silicon films by Raman spectroscopy measurement have been investigated. Large laser power incident into the microcrystalline silicon film during measurement may cause some amorphous to crystalline phase transition. In addition, the local temperature rise during measurement also leads to some spectrum shift. Both effects results in incorrect or inaccurate evaluation of microcrystalline silicon film crystallinity. By changing the laser power during amorphous silicon film Raman measurement, it is found that the critical power density to induce crystallization of amorphous silicon is ～455kW/cm2. Furthermore, red-shift of the Raman peak due to local heating effect is observed.
Y.-J. Yang Y.-H. Yang C.-Y. Peng C. W. Liu
Department of Electrical Engineering and Graduate Institute of Electronics Engineering, National Taiwan University, Taipei, Taiwan 106, R.O.C.
国际会议
China Semiconductor Technology International Conference 2010(中国国际半导体技术大会 CSTIC)
上海
英文
1147-1151
2010-03-18（万方平台首次上网日期，不代表论文的发表时间）