A Comparison of Avalanche Injection of Holes and Total Dose Radiation Effects in RadFETs
Radiation sensitive Field Effected Transistors (RadFETs) have been widely used as dosimeters to detect the Total Dose Radiation Effects (TDRE). Because ionizing radiation for testing RadFET samples is costly and inconvenient, Avalanche Injection of Holes (AIH) was introduced to simulate or substitute the radiation methods to evaluate the quality of RadFETs in this paper. Several kinds of dielectric layers of RadFETs were fabricated and the comparison of AIH and TDRE was investigated. It was found that AIH can cause the similar △VTH and annealing change trends with TDRE to predict the radiation characteristics of RadFETs.
Hao Tang Yi Wang Jinyan Wang Yijun Zheng Yufeng Jin
Institute of Microelectronics, Peking University, Beijing 100871, P. R. China Peking University Shen Institute of Microelectronics, Peking University, Beijing 100871, P. R. China
国际会议
China Semiconductor Technology International Conference 2010(中国国际半导体技术大会 CSTIC)
上海
英文
1159-1163
2010-03-18（万方平台首次上网日期，不代表论文的发表时间）