Effect of Input Power on the Deposition of Optical Grade Thick Diamond Film in a DCPJ CVD Jet System
High quality optical grade thick diamond film wafers with different thickness are prepared by high power DC arc plasma jet CVD (DCP.I CVD) method using a CH4/Ar/H2 gas mixture. Three different powers, 13.65, 15.40 and 17.94kW, were employed during the investigation. The aim was to investigate the effect of these powers on the deposition of thick diamond film. The controlled system was discussed together. The results show that the average diamond grain size and growth rate increase with input plasma power, but a further increase in input power, diamond thick-film defects and amorphous carbon content increased.
input power thick diamond film CVD thick diamond film
R.F.Chen Z.X.Shen L.G.Dai X.L.Zhang R.Zhu D.W.Zuo
Department of Mechanical Engineering,Yangzhou University,Yangzhou,225009,China Department of Mechanical and Electrical Engineering,Nanjing University of Aeronautics and Astronauti
国际会议
常州
英文
245-248
2009-11-19(万方平台首次上网日期,不代表论文的发表时间)