Silicon-based long wavelength photodetectors

摘要：

Three types of Si-based photodetectors (PD) operating at long wavelength were introduced: the strained SiGe/Si multi-quantum-wells PD and Ge/Si islands PD with resonant cavity enhanced (RCE) structure, Ge p-i-n PD on silicon and SOI, Ge/Si avalanche photodetectors (APDs) with separate absorption, charge and multiplication (SACM) structure. The strained SiGe/Si MQW RCE PD and Ge/Si islands RCE PD has a threefold enhanced responsivity compared with the conventional PD without a resonant cavity. The Ge p-i-n PD on SOI has a responsivity of 0.65 A/W at 1.31μm and 0.32 A/W at 1.55μm. The 3dB bandwidth is 13.3GHz at reverse bias of 3 V. The Ge/Si SACM APD operating at 1310 nm have a responsivity of 4.4A/W (with a gain of 8.8) biased at 90％ of break voltage.

关键词： 040.5160 230.5160

作者: Buwen Cheng Haiyun Xue Chunlai Xue Chuanbo Li Cheng Li Weixuan Hu Yuhua Zuo Qiming Wang

作者单位: State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, P. R. China

会议类型: 国际会议

会议名称: ACP2009亚太光纤通信与光电国际会议

会议地点: 上海

会议语种:英文

页码: 1-2

在线出版日期: 2009-11-01（万方平台首次上网日期，不代表论文的发表时间）