AlGaInAs Quantum-Well Lasers with Semi-Insulating Buried-Heterostructure for High-Speed Direct Modulation up to 40 Gbps

摘要：

We introduce our recent works on AlGaInAs quantum-well lasers with semi-insulating buried-heterostructure for ultra-high-speed transmission. The short-cavity DFB lasers show high-speed direct modulation at 25 and 40 Gbps, and the distributed reflector lasers with shortened active-region length provide reduced driving current in ultra-high-speed direct modulation.

关键词： (140.5960) Semiconductor lasers (250.5960) Semiconductor lasers

作者: K. Otsubo M. Matsuda K. Takada S. Okumura A. Uetake M. Ekawa T. Yamamoto

作者单位: Fujitsu Laboratories Ltd. Fujitsu Ltd., 10-1 Morinosato-Wakamiya, Atsugi 243-0197, Japan Optoelectro Fujitsu Laboratories Ltd.

会议类型: 国际会议

会议名称: ACP2009亚太光纤通信与光电国际会议

会议地点: 上海

会议语种:英文

页码: 1-2

在线出版日期: 2009-11-01（万方平台首次上网日期，不代表论文的发表时间）