Temperature Characteristics Improvement Using Strain in Barriers of 1.3μm AlGaInAs-InP Multiple Quantum Well Laser

摘要：

Compressive strain is applied in barriers of multiple quantum well AlGaInAs-InP 1.3μm lasers and cause to better gain and current density in high temperatures .multi band effective mass and quantum electrodynamics theories are used to simulate the structure. The mode gain-current density characteristic is improved more than 20％ in 85℃.

关键词： (140.0140) General (140.5960) General

作者: Vahid Bahrami Yekta Hassan Kaatuzian

作者单位: Photonics Research Laboratory, Amirkabir University of Technology, Tehran, Iran

会议类型: 国际会议

会议名称: ACP2009亚太光纤通信与光电国际会议

会议地点: 上海

会议语种:英文

页码: 1-2

在线出版日期: 2009-11-01（万方平台首次上网日期，不代表论文的发表时间）