Calculation of Exciton Energy in InAs/InP Self-assembled Semiconductor Quantum Wires

摘要：

Theoretical calculations of exciton in InAs/InP self-assembled quantum wires are presented in this paper. Coulomb interaction between electron and hole is calculated by fast Fourier transformation. In our simulations, strain effects are considered. Finally, we obtain the exciton binding energy by solving 1D Schrodinger equation along the quantum wire direction.

关键词： (160.4236) Nanomaterials (000.4430) Numerical approximation and analysis

作者: Xu Zihuan Liu Yumin Yu Zhongyuan Yao Wenjie

作者单位: Key Laboratory of Information Photonics and Optical Communications (BUPT), Ministry of Education; Institute of Optical Communications and Optoelectronics, Beijing University of Posts and Telecommunications P.O. Box 49 (Room 731), Beijing 100876, China

会议类型: 国际会议

会议名称: ACP2009亚太光纤通信与光电国际会议

会议地点: 上海

会议语种:英文

页码: 1-2

在线出版日期: 2009-11-01（万方平台首次上网日期，不代表论文的发表时间）