Photoluminescence with Ultra-wide Spectrum from Radiative Defects in Si-rich SiNx

摘要：

The photoluminescence from the radiative recombination defects in Si-rich SiNx with various Si concentrations was investigated. Due to the Si and N dangling bonds, ultra-wide spectra with full width at half maximum of ～250nm were achieved in visible region.

关键词： (250.0250) Optoelectronics (250.5230) Photoluminescence

作者: Weiwei Ke Xue Feng Xuan Tang Yoshinori Tanaka Dai Ohnishi Yidong Huang

作者单位: State Key Lab. of Integrated Optoelectronics, Department of Electronic Engineering, Tsinghua Univers Photonics R&D Center. ROHM CO., LTD. 21, Saiin Mizosaki-cho, Ukyo-ku, Kyoto 615-8585, Japan

会议类型: 国际会议

会议名称: ACP2009亚太光纤通信与光电国际会议

会议地点: 上海

会议语种:英文

页码: 1-2

在线出版日期: 2009-11-01（万方平台首次上网日期，不代表论文的发表时间）