Enhancement and Stabilization of Photoluminescence of Porous Silicon by LaF3 Passivation

摘要：

E-beam evaporated LaF3 passivation of porous silicon (PS) has been investigated in this report. Heat treatment of the LaF3-passivated PS structure improves the PL characteristics. Passivation with thinner layer of LaF3 leaded to a good enhancement of photoluminescence intensity while thicker layer showed stabilization of photoluminescence.

关键词： 160.2540 250:5230

作者: Sinthia Shabnam Mou Md. Abdur Rahman Abu Bakar Md. Ismail

作者单位: School of Engineering and Computer Science, Independent University, Dhaka 1212, Bangladesh Dept. of Applied Physics and Electronic Engineering, Rajshahi University, Rajshahi 6205, Banglaesh

会议类型: 国际会议

会议名称: ACP2009亚太光纤通信与光电国际会议

会议地点: 上海

会议语种:英文

页码: 1-2

在线出版日期: 2009-11-01（万方平台首次上网日期，不代表论文的发表时间）