A Study on the Cl2/C2H4/Ar Plasma Etching of ITO Using Inductively Coupled Plasma

摘要：

In this study, the indium tin oxide (ITO) was etched by an inductively coupled plasma (ICP) etcher using Cl2/C2H4/Ar as the etching gases. A detailed study on the samples etched in different parameters was performed.

关键词： (230.3670) Light emitting diodes (220.4000) Microstructure fabrication

作者: Rong Fang Xia Guo Wen Jing Jiang Yu Han Guo Yuan Qin Guang Di Shen Jin Ru Han

作者单位: Beijing Optoelectronic Technology Laboratory, Institute of Electronic Information and Control Engineering,Beijing University of Technology, Beijing 100124, China

会议类型: 国际会议

会议名称: ACP2009亚太光纤通信与光电国际会议

会议地点: 上海

会议语种:英文

页码: 1-2

在线出版日期: 2009-11-01（万方平台首次上网日期，不代表论文的发表时间）