Point defects in relaxed and strained Si studied by molecular dynamics method

摘要：

Molecular dynamics simulations using the Tersoff potential have been performed to investigate the perturbation effects caused by the point defects in relaxed and strained Si matrices. As different kinds of point defects are introduced, Lattice distortion, mean square displacement, and vibrational spectra change obviously.

关键词： (160.6000 ) Semiconductor materials (230.4000) Microstructure fabrication

作者: Zhihui Chen Zhongyuan Yu Pengfei Lu Yumin Liu

作者单位: Key Laboratory of Information Photonics and Optical Communications (BUPT), Ministry of Education Institute of Optical Communications and Optoelectronics, Beijing University of Posts and Telecommunications, Beijing 100876, China

会议类型: 国际会议

会议名称: ACP2009亚太光纤通信与光电国际会议

会议地点: 上海

会议语种:英文

页码: 1-2

在线出版日期: 2009-11-01（万方平台首次上网日期，不代表论文的发表时间）