Photoresist removal on a 90nm-patterned Si wafer by Excimer laser irradiation

摘要：

Photoresist stripping on 90nm-patterned Si wafer was demonstrated by excimer laser irradiation. A 90nm-patterned Si wafer with PR coating was irradiated at various laser conditions and observed the surface by SEM and EDS. PR was perfectly removed by laser irradiation with energy density of 250 mJ/cm2 and 10 laser shots.

关键词： (350.3390) Laser Material Processing (350.6670) Surface Photochemistry

作者: H. Jeong J. Y. Baek M. -H. Lee S. J. Na J. S. Kim

作者单位: Green Chemistry & Manufacturing System Division, Korea Institute of Industrial Technology 35-3, Hongcheon-ri, Ipjang-myeon,Cheonan-si, 330-825 , Republic of Korea

会议类型: 国际会议

会议名称: ACP2009亚太光纤通信与光电国际会议

会议地点: 上海

会议语种:英文

页码: 1-2

在线出版日期: 2009-11-01（万方平台首次上网日期，不代表论文的发表时间）