Investigation of the Doping Profile Effect on Operation of Internally Q-Switched Laser Diodes Aiming at High-Power Picosecond Light Source

摘要：

Lately demonstrated high-power (50W from 20μm stripe) picosecond (30ps) lasing from a laser diode has addressed us to internal Q-switching phenomenon, discovered four decades ago and not understood so far. We found that the realization of nanosecond or picosecond mode from a diode depends on doping profile across the structure.

关键词： (140.5960) Semiconductor Lasers (160.6000) Semiconductor Materials

作者: Brigitte Lanz Sergey Vainshtein Juha Kostamovaara Vladimir Lantratov Nikolay Kaluzhniy

作者单位: Electronics Laboratory, Department of Electrical and Information Engineering, University of Oulu, P. Russian Academy of Sciences, Ioffe Physico-Technical Institute, 26 Polytechnicheskaya, 194021 St. Pe

会议类型: 国际会议

会议名称: ACP2009亚太光纤通信与光电国际会议

会议地点: 上海

会议语种:英文

页码: 1-2

在线出版日期: 2009-11-01（万方平台首次上网日期，不代表论文的发表时间）