High Data Rate 850 nm Oxide VCSEL for 20 Gb/s Application and Beyond

摘要：

In this paper we report 850nm oxide VCSEL operating at up to 25 Gb/s (PRBS31) with 5dB ER, based on a high volume manufacturing platform with MOCVD grown GaAs/AlGaAs epi-material. We will also discuss VCSEL characterization results relevant for optical transceiver applications beyond 10Gb/s.

关键词： 140.2020 Diode lasers 140.7260 Vertical cavity surface emitting lasers 200.4650 Optical interconnects

作者: Chen Ji Jingyi Wang David Soderstrom Laura Giovane

作者单位: Avago Technologies, III-V device R&D group, Fiber Optics Product Division, 350 West Trimble Rd. San Jose, CA 95131, USA

会议类型: 国际会议

会议名称: ACP2009亚太光纤通信与光电国际会议

会议地点: 上海

会议语种:英文

页码: 1-2

在线出版日期: 2009-11-01（万方平台首次上网日期，不代表论文的发表时间）