Fabrication and Characterization of 1.3-μm InAs Quantum-Dot VCSELs and Monolithic VCSEL Arrays

摘要：

We present fabrication of 1.3-μm InAs QD-VCSELs and arrays. The output power of single VCSEL exceeds 1.2 mW. Modulation bandwidth of 2.65 GHz and 2.5 GHz are achieved for single-mode and multi-mode VCSELs. Maximum output power of 28 mW is demonstrated for VCSEL arrays with threshold current of 50 mA.

关键词： (250.5590) Quantum-well, -wire and -dot devices (250.7260) Vertical cavity surface emitting lasers

作者: Y. Ding N. H. Zhu W. J. Fan D. W. Xu C. Z. Tong S. F. Yoon D. H. Zhang L. J. Zhao W. Wang Y. Liu

作者单位: School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore 639798, Optoelectronics R&D Center, Institute of Semiconductors, Chinese Academy of Sciences, P.O.Box 912, B Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of S

会议类型: 国际会议

会议名称: ACP2009亚太光纤通信与光电国际会议

会议地点: 上海

会议语种:英文

页码: 1-2

在线出版日期: 2009-11-01（万方平台首次上网日期，不代表论文的发表时间）