Numerical Investigation of the Effect of Base Doping Density in Transistor VCSELs

摘要：

Transistor VCSELs with different base doping densities are numerically modelled. The effect of the base doping density on both optical and electrical properties, i.e., laser threshold, optical power, slope efficiency, and electrical gain, is investigated.

作者: Wei Shi Behnam Faraji Lukas Chrostowski

作者单位: Department of Electrical and Computer Engineering, University of British Columbia, Canada

会议类型: 国际会议

会议名称: ACP2009亚太光纤通信与光电国际会议

会议地点: 上海

会议语种:英文

页码: 1-2

在线出版日期: 2009-11-01（万方平台首次上网日期，不代表论文的发表时间）