Effect of In and N incorporation on the GaInNAs VCSELs.

摘要：

We study the effect of In and N content in GaInNAs material system for application of 1.3 μm vertical cavity surface emitting lasers (VCSEL). The emission wavelength are successfully observed at 1.303 μm wavelength. VCSEL sample with Ga0.58In0.42As QW give the highest output power (0.5694 mW) with threshold current 11mA.

关键词： (250.7260) Vertical cavity surface emitting lasers (160.6000) Semiconductor materials

作者: Nor Azlian Abdul Manaf Mohd Sharizal Alias Sufian Mousa Mithani Mohamed Razman Yahya Abdul Fatah Awang Mat

作者单位: Microelectronic and Nanotechnology Program Telekom Malaysia Research and Development 63000 Cyberjaya, Selangor Darul Ehsan, Malaysia

会议类型: 国际会议

会议名称: ACP2009亚太光纤通信与光电国际会议

会议地点: 上海

会议语种:英文

页码: 1-2

在线出版日期: 2009-11-01（万方平台首次上网日期，不代表论文的发表时间）