Performance of 650 nm AlGaInP RCLEDs with Different P-type DBRs

摘要：

The performance of 650nm RCLEDs including 34-pair AlGaAs/AlAs n-type DBRs and different pairs of AlGaInP/AlInP p-type DBRs have been investigated both theoretically and experimentally. The experimental results demonstrate that the device of optimized DBR mirrors with 10-pair p-type DBRs obtain high efficiency, low turn-on voltage and better temperature stability.

关键词： (230.3670) Light emitting diodes (310.1860) Deposition and fabrication

作者: Yidan Tang Xia Guo Jun Ma Yixin Chen Jianjun Li Guangdi Shen

作者单位: Beijing Optoelectron. Technol. Lab, Beijing Univ. of Techno.l, Beijing, 100124, china

会议类型: 国际会议

会议名称: ACP2009亚太光纤通信与光电国际会议

会议地点: 上海

会议语种:英文

页码: 1-2

在线出版日期: 2009-11-01（万方平台首次上网日期，不代表论文的发表时间）