Semipolar (11-22)-based InGaN/GaN quantum wells for visible light emitters

摘要：

Visible light emitting diodes (LEDs) using semipolar (11-22)-oriented InGaN/GaN quantum wells (QWs) were demonstrated. Three dimensional microfacet structures realized white/pastel emissions without phosphors, while planar structures led to LEDs with much less polarization-induced internal electric fields compared to the conventional LEDs on the (0001) plane, both of which cannot be realized without the (11-22) planes.

关键词： (230.3670) Light-emitting diodes (230.0250) Optoelectronics (160.6000) Semiconductor materials

作者: Mitsuru Funato Yoichi Kawakami

作者单位: Department of Electronics Science and Engineering, Kyoto University Kyoto 615-8510, Japan)

会议类型: 国际会议

会议名称: ACP2009亚太光纤通信与光电国际会议

会议地点: 上海

会议语种:英文

页码: 1-2

在线出版日期: 2009-11-01（万方平台首次上网日期，不代表论文的发表时间）