Fabrication and Characterization of Embedded Air-Prism Light Emitting Diodes

摘要：

We report characteristics of the InGaN/GaN light emitting diodes (LEDs) with embedded air prisms (EAP) via a wet etching process. EAP LED output power was increased 2.1 times compared with the conventional LED due to the improvement in the scattering of photons at the EAP interface.

关键词： (250.0250) Optoelectronics (230.0230) Optical device

作者: Chang-Hee Hong

作者单位: Chonbuk National University, Korea

会议类型: 国际会议

会议名称: ACP2009亚太光纤通信与光电国际会议

会议地点: 上海

会议语种:英文

页码: 1-2

在线出版日期: 2009-11-01（万方平台首次上网日期，不代表论文的发表时间）