Nitrogen plasma enhanced quantum well intermixing in InGaAsP/InP laser structure

摘要：

Experimental results on a new method of plasma enhanced quantum well intermixing is presented. Using nitrogen plasma treatment followed by rapid thermal annealing, a 100nm-blueshift of photoluminescence peak is obtained. The new method has much weaker side-effect of etching than previously reported method using Argon plasma.

关键词： (130.3120) Integrated optics devices (250.3140) Integrated optoelectronic circuits

作者: Shenghua Peng Xin Zhang Jian-Jun He

作者单位: Center for Integrated Optoelectronics, State Key Laboratory of Modern Optical Instrumentation, Zhejiang University, Hangzhou, PR China, 310027

会议类型: 国际会议

会议名称: ACP2009亚太光纤通信与光电国际会议

会议地点: 上海

会议语种:英文

页码: 1-2

在线出版日期: 2009-11-01（万方平台首次上网日期，不代表论文的发表时间）