Strain and Crystal Orientation-dependent Optical Properties of Mid-infrared GaSb-based Quantum Well Laser

摘要：

Strain- and crystal orientation-dependent optical properties of GaSb-based mid-infrared quantum well lasers are numerically studied by solving one-dimension Schr?dinger equation. The simulation results demonstrate that there is a strong correlation of peak emission wavelength and optical gain with crystal orientation and strain.

关键词： 140.3070(infrared and far-infrared lasers) 250.5590(quantum well, wire and dot devices)

作者: Md. Mahbub Hasan Md. Rafiqul Islam

作者单位: Department of Electrical and Electronic engineering Khulna University of Engineering & Technology Khulna-9203, Bangladesh

会议类型: 国际会议

会议名称: ACP2009亚太光纤通信与光电国际会议

会议地点: 上海

会议语种:英文

页码: 1-2

在线出版日期: 2009-11-01（万方平台首次上网日期，不代表论文的发表时间）