Research on Dielectric Properties of Gallium Arsenides by Using THz-TDS
By using terahertz time domain spectroscopy (THz-TDS) system, the terahertz dielectric properties of various gallium arsenides were tested in the frequency range extending from 0.2 to 1.5 THz. The power absorption coefficient and refractive index of various resistivity gallium arsenides were measured and compared. The refractive index of the high resistivity and ultra-high resistivity GaAs are equal to be 6.53 and 5.9, respectively. The variation of the refractive index of the GaAs was less than 1％, ranging from 0.2 to 1.5THz, but the absorption coefficient of the ultra-resistivity GaAs showed very different frequency-dependent behaviors, ranging from 0.02cm-1 to 2.21cm-1, within the investigated frequency range. The results show that the ultra-resistivity GaAs will be a good candidate material for terahertz transmission waveguide.
(160.6000) Semiconductor materials
Li Jiusheng Zhao Xiaoli
Centre for THz Research, China Jiliang University, Hangzhou 310018, China
国际会议
上海
英文
1-2
2009-11-01（万方平台首次上网日期，不代表论文的发表时间）