Growth of GaAs Nanowires with Various Thickness of Au Film

摘要：

GaAs nanowires were grown on GaAs(111)B substrates via VLS mechanism with various Au film thickness. Experiment results indicated that thicker Au film results in larger diameters, more dispersed size distribution, and lower density of the nanowires. The growth rate is independent on diameters, while it decreases with the density.

关键词： (160.6000) Semiconductor materials

作者: Xian Ye Hui Huang Xiaomin Ren Yisu Yang ShiWei Cai Yongqing Huang Qi Wang

作者单位: Key Laboratory of Information Photonics & Optical Communication Ministry of Education, Beijing University of Posts and Telecommunications, Beijing 100876, China

会议类型: 国际会议

会议名称: ACP2009亚太光纤通信与光电国际会议

会议地点: 上海

会议语种:英文

页码: 1-2

在线出版日期: 2009-11-01（万方平台首次上网日期，不代表论文的发表时间）