Study of photoluminescence properties of Nd-O+-codoped Si-based thin film

摘要：

The photoluminescence(PL) spectra at room temperature for the Si-based samples doped by Nd 、 O+ are measured.All the samples possess blue-violet PL properties and light emission is stable.The PL spectra has multiple peak structure.The intensity of PL spectra is relative to Nd and O+ implantation and the annealing temperature.The light emission is more greater for the sample of first O+ then Nd ion-implanted silicon than the one of first Nd then O+ ion-implanted silicon.

关键词： (250.5230) General (160.4760) General

作者: YUAN Meiling LI Chenfa LENG Xinli

作者单位: Department of Phisics,Nanchang University,Nan chang Jiangxi,33031, China

会议类型: 国际会议

会议名称: ACP2009亚太光纤通信与光电国际会议

会议地点: 上海

会议语种:英文

页码: 1-2

在线出版日期: 2009-11-01（万方平台首次上网日期，不代表论文的发表时间）