Thermal Annealing Effect on the Mg Doped AlGaN/GaN Superlattice
Mg-doped AlGaN/GaN superlattice has been grown by metalorganic chemical vapor deposition (MOCVD). Rapid thermal annealing (RTA) treament are carryied out on the samples under nitrogen as protect gas. Hall, photoluminescence (PL) and atomic-force microscopy (AFM) are used to characterize the electrical, optical and structural properties of the as-grown and annealed samples, respectively. After annealing, the Hall results indicate more Mg acceptors are activated, which leads to higher hole concentration and lower p-type resistivity. The PL intensity of Mg related defect band shows a strong decrease after annealing. Many nanometer-grains can be observed on the surface of AlGaN/GaN superlattice from the AFM image. This maybe related with the decomposing of GaN or the separating of Mg from the AlGaN/GaN superlattice.
160.6000 310.6860
Baozhu Wang Xiaoliang Wang
Institute of Information Science and Engineering, Hebei University of Science and Technology, Shijia Institute of Semiconductors, Chinese Academy of Sciences, Beijing China 100083
国际会议
上海
英文
1-2
2009-11-01（万方平台首次上网日期，不代表论文的发表时间）