Low-temperature Si/Si Wafer Bonding Using Boride Treated Surface

摘要：

An approach for Si/Si wafer bonding based on boride-solution treatment was presented. The bonding energy is higher than the Si fracture energy by annealing at 180℃. The properties of the bonded structures were studied in terms of the interface shape, electrical and optical characteristic through SEM, and interface I-V curve.

关键词： (160.6000) Semiconductor materials (350.3850) Materials processing

作者: Hailan Song Hui Huang Xiaomin Ren Wenjuan Wang Yongqing Huang

作者单位: Key Laboratory of Information Photonics & Optical Communication Ministry of Education, Beijing University of Posts and Telecommunications, Beijing 100876, China

会议类型: 国际会议

会议名称: ACP2009亚太光纤通信与光电国际会议

会议地点: 上海

会议语种:英文

页码: 1-2

在线出版日期: 2009-11-01（万方平台首次上网日期，不代表论文的发表时间）