The electrical properties of the diamond optoelectronic device
200 μm thick free-standing polycrystalline diamond films were grown by microwave plasma chemical vapor deposition (MPCVD) method. The nucleation surfaces of diamond were characterized by XRD, Raman scattering, atomic force microscopy (AFM) method. An ultraviolet (UV) optoelectronic device was fabricated on diamond nucleation surface, showing clear modulation of channel current.
230.0250) Optoelectronics (230.5160) Photodetectors
Yi Zhang Jiahua Min Yiben Xia Lin-jun Wang Jian Huang Ke Tang Fengjuan Zhang Qian Fang Qingkai Zeng Run Xu Jijun Zhang
School of Materials Science and Engineering, Shanghai University, Shanghai 200072, China
国际会议
上海
英文
1-2
2009-11-01(万方平台首次上网日期,不代表论文的发表时间)