A Quasi-3D Simulation for High-Voltage Level- Shifting Circuit by Divided RESURF Structure

摘要：

A new quasi-3D simulation technique to verify the highvoltage level-shifting circuit by divided RESURF structure is proposed. It simulates the 3D performances of the structure by combining the devices paralleled to plane x-y and plane y-z with the circuit analysis advanced application module of Medici. The punch-through effect and parasitic n-MOST effect in the structure are analyzed and simulated. The results prove that only the parasitic n-MOST has been developed in this structure. The optimized parameters of the divided RESURF structure can be proposed to suppress the parasitic n-MOST effect. The quasi-3D simulation technique has many merits, such as computing quickly, no demand on the high-end computer terminals and operating easily.

关键词： quasi-3D level-shifting divided RESURF

作者: Jizhi Liu

作者单位: State Key Laboratory of Electronic Thin Films and Integrated Devices University of Electronic Science and Technology of China Chengdu, China

会议类型: 国际会议

会议名称: 2009 International Conference on Applied Superconductivity and Electromagnetic Devices(应用超导与电磁装置技术国际会议 ASEME 2009)

会议地点: 成都

会议语种:英文

页码: 73-76

在线出版日期: 2009-09-25（万方平台首次上网日期，不代表论文的发表时间）