A New Back-Gate SOI High Voltage Device with a Compound Layer
A back-gate silicon on insulator (SOI) high voltage device with a compound layer (BG CL SOI-LDMOS) is proposed to enhance breakdown voltage of SOI device. Introducing of compound layer(CL) can effectively suppress gain of surface electric field at source side，and increase electric field in the buried oxide layer. Thus breakdown voltage of device is increased remarkably with invariable specific on-resistance. The breakdown voltage and electric field profile are researched for the new structure by using 2D MEDICI software. Simulation result shows that BG CL SOI-LDMOS can reach 557 V, 165.8 ％ higher than conventional SOI, at 1μm-thick buried oxide layer， 40 μm-length drift region and 240V back-gate voltage.
silicon on insulator breakdown voltage compound layer
Xiaoming Yang Tianqian Li Bo Zhang Xiaorong Luo
School of Electrical and Information Xihua University Chengdu, China State Key Laboratory of Electronic Thin Films and Integrated Devices University of Electronic Scienc
国际会议
成都
英文
112-114
2009-09-25（万方平台首次上网日期，不代表论文的发表时间）