The Two Dimensional Eelectron Gas in BST/Al0.3Ga0.7N/GaN Double Heterostructure
In this paper, we take account of spontaneous and piezoelectric polarization effect of BST and AlGaN. At the hetero-interface in BST/ Al0.3Ga0.7N /GaN double heterostructure, one-dimensional Poisson-Schrodinger equation using nonuniform mesh are solved self-consistently in dependence of the polarization and thickness of BST and the thickness of AlGaN barrier layer. BST/Al0.3Ga0.7N/GaN double heterostructure conduction band and the two-dimensional electron gas(2DEG) density are investigated. The results indicate that the 2DEG density of BST/Al0.3Ga0.7N/GaN is larger than that of Al0.3Ga0.7N/GaN, for a 8nm BST on AlGaN/GaN structure, the 2DEG density reached 1.85×1013cm-2, which is 23％ higher than that of AlGaN/GaN structure.
polarizatio BST GaN AlGaN heterostructure 2DEG
Ying Liu Chuanren Yang Jihua Zhang Song Wu Hongwei Chen
State Key Laboratory of Electronic Thin Films and Integrated Devices University of Electronic Science & Technology of China Chengdu, China
国际会议
成都
英文
176-179
2009-09-25（万方平台首次上网日期，不代表论文的发表时间）