The measurement of silicon x(3) susceptibility tensor at 1.3μm wavelengths with electro-induced birefringence

摘要：

By using the electric-induced birefringence phenomena, the third-order susceptibility tensor of bulk crystalline silicon are determined at 1.3μm wavelengths; we deduct the electroinduced birefiingence if a Si crystal is biased along 〈111〉 crystallographic direction , then measure the relationship between phase retardation △φ due to birefringence and the external voltage, The two independent tensor of silicon x(3) susceptibility can be obtained by calculation x(3)xxyy = 6.23 x 10-20 m2 / V 2 and x(3)xxxx = 13.01 x 10-20 m2 / V2.

关键词： Kerr effect electro-induced birefringence third-order nonlinear susceptibility

作者: ZHANG Yuhong LIU Hang

作者单位: Jilin Institute of Architectural and Civil Engineering, Changchun 130021

会议类型: 国际会议

会议名称: The 6th International Symposium of Asia Institute of Urban Environment(亚洲城市环境学会第六届国际会议)

会议地点: 长春

会议语种:英文

页码: 617-620

在线出版日期: 2009-09-20（万方平台首次上网日期，不代表论文的发表时间）