Monolithic mode-locked lasers based on InAs/InP quantum dots

摘要：

We have designed, grown and fabricated an InAs/InP quantum dot (QD) gain material to be an excellent candidate for C- and L-band mode-locked laser (MLL) applications. Femtosecond (fs) pulses with pulse duration of 295 fs from a single-section monolithic Fabry-Perot (F-P) cavity with repetition rate of 50 GHz have been demonstrated. The operation wavelength range covers from 1530 nm to 1600 nm. The average output power is up to 50 mW for the injection current of 300 mA at the room temperature of 180C. The working principle of the proposed QD MLL has been discussed in this paper.

作者: Z.G. Lu J.R. Liu P.J. Poole S. Raymond P.J. Barrios D. Poitras G. Pakulski P. Grant

作者单位: Institute for Microstructural Sciences, National Research Council Canada, Ottawa, ON K1A 0R6, Canada

会议类型: 国际会议

会议名称: 2009年光通信与网络国际会议

会议地点: 北京

会议语种:英文

页码: 1-4

在线出版日期: 2009-09-01（万方平台首次上网日期，不代表论文的发表时间）