Half-buried structure Cu bus line in TFT LCD

摘要：

As we know, we normally used stacked aluminum bus line as the Gate or Source/Drain layer in LCD now, but the next general LCD needs larger display area, higher resolution, and faster response time, so we need develop the new TFT bus line structure and select the appropriate metallization materials to decrease the resistance of bus line. There are many new kinds of structure and material were used, for example copper, silver and their alloys, pure copper have some advantages among them because of its low electric resistance and cost, but it is restricted by the problem of pure copper’s lifting and etching. In this paper, we not only use electroless copper plating to decrease the resistance and cost of bus line but also use the half-buried structure to increase the thickness of bus line, it can combine these two new technologies well in LCD. We use the half-buried structure copper bus line to make some panel samples, it can decrease the delay of RC greatly (it is lower than 1/4 of normal aluminum bus line panel in the same size).

关键词： Half-buried Cu Bus Line Electroless Plating RC delay

作者: Honglong Ning Chang-Oh Jeong Kiyong Song Sunghen Cho Jaehong Kim Dongju Yang Jeanho Song Shiyul Kim

作者单位: Process Development Group, LCD Technology Center, LCD Business, Samsung Electronics Co.,LTD San ＃24, Process Development Group, LCD Technology Center, LCD Business, Samsung Electronics Co.,LTD San #24, Process Development Group, LCD Technology Center, LCD Business, Samsung Electronics Co.,LTD San #24, Process Development Group, LCD Technology Center, LCD Business, Samsung Electronics Co.,LTD San #24,

会议类型: 国际会议

会议名称: 2009 International Symposium on Liquid Crystal Science and Technology(2009国际液晶科技研讨会)

会议地点: 昆明

会议语种:英文

页码: 329-334

在线出版日期: 2009-08-02（万方平台首次上网日期，不代表论文的发表时间）