Self-similarity of electrochemically-deposited copper films on porous silicon
The microstructures of electrochemically-deposited copper control electrode on semiconducting porous silicon films were investigated with scanning electron microscopy. Our results showed that smooth control electrode could be grown in areas far from the edge of porous silicon film while irregular electrode was formed on the circular edge of porous silicon films. The self-similarity of the electrochemically-deposited copper control electrode was analyzed in details.
Self-similarity Porous silicon Electrochemical deposition Simulation
Lan-li Chen Bao-gai Zhai Yuan Ming Huang
Department of Electronics, Nanyang Institute of Technology, Henan 473004, China Modern Educational Technology Center, Yunnan Normal University, Yunnan 650092, China College of Physics & Electronic Information, Yunnan Normal University, Yunnan 650092, China
国际会议
2009 International Symposium on Liquid Crystal Science and Technology(2009国际液晶科技研讨会)
昆明
英文
515-518
2009-08-02(万方平台首次上网日期,不代表论文的发表时间)