Research on quantum state in fabricating poly-Si films

摘要：

Amorphous silicon films prepared by PECVD on glass substrate have been crystallized by rapid thermal annealing (RTA). By means of micro-Raman scattering and scanning electronic microscope (SEM), the quantum states in these processions are found and discussed.

关键词： PECVD a-Si: H film Pulsed rapid thermal annealing Quantum states.

作者: Ruimin Jin Lan-li Chen Penghui Luo Xinfeng Guo Jingxiao Lu

作者单位: Department of Electronics, Nanyang Institute of Technology, Henan 473004, China Key Laboratory of Ma Department of Electronics, Nanyang Institute of Technology, Henan 473004, China Key Laboratory of Material Physics of the Ministry of Education of China, Zhengzhou University,Henan

会议类型: 国际会议

会议名称: 2009 International Symposium on Liquid Crystal Science and Technology(2009国际液晶科技研讨会)

会议地点: 昆明

会议语种:英文

页码: 540-543

在线出版日期: 2009-08-02（万方平台首次上网日期，不代表论文的发表时间）